View MTA015C02Q8-0-T3-G_8980454.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 1/13 mta015c02q8 cystek product specification n- and p-channel logic level enhancement mode mosfet mta015c02q8 features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTA015C02Q8-0-T3-G sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel mta015c02q8 sop-8 g gate s source d drain n-ch p-ch bv dss 20v -20v i d@ t a =25 c, v gs =4.5v(-4.5v) 8.5a -5a r dson (typ.) @v gs =(-)4.5v 14.3m 50.3m r dson (typ.) @v gs =(-)2.5v 19m 66.6m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products product name pin 1 d2 d2 d1 d1 s1 g1 s2 g2
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 2/13 mta015c02q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 20 -20 gate-source voltage v gs 8 8 v t a =25 c, v gs =4.5v (-4.5v) 8.5 -5 continuous drain current (note 2) t a =70 c, v gs =4.5v (-4.5v) i d 6.8 -4 pulsed drain current (note 1) i dm 40 -30 a t a =25 c 2.5 power dissipation (note 2) t a =70 c p d 1.6 w operating junction and storage te mperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 25 thermal resistance, junction-to-ambient, max r ja 50 (note 2) c/w lead temperature(1/16? from case, for 10 seconds) t l 275 c note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 20 - - v gs =0v, i d =250 a v gs(th) 0.5 - 1.3 v v ds =v gs , i d =250 a i gss - - 100 na v gs =8v, v ds =0v - - 1 v ds =18v, v gs =0v i dss - - 25 a v ds =18v, v gs =0v, tj=125 c - 14.3 20 v gs =4.5v, i d =8a *r ds(on) - 19 40 m v gs =2.5v, i d =5.2a *g fs - 7.6 - s v ds =10v, i d =3a dynamic ciss - 804 1045 coss - 99 135 crss - 87 115 pf v ds =10v, v gs =0v, f=1mhz *td (on) - 8.8 18 *tr - 21.8 44 *td (off) - 59.4 120 *tf - 27 54 ns v ds =10v, i d =1a, v gs =4.5v, r g =10 *qg - 10 15 *qgs - 1.3 2.6 *qgd - 2.9 6 nc v ds =10v, i d =5a, v gs =4.5v
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 3/13 mta015c02q8 cystek product specification rg - 1.2 2.4 f=1mhz body diode *i s - - 1.9 *i sm - - 7.6 a *v sd - 0.82 1.2 v v gs= 0v, i s =2.5a *qrr - 8.3 - nc *trr - 3.1 - ns i f =1a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -20 - - v gs =0v, i d =-250 a v gs(th) -0.5 - -1.3 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =8v, v ds =0v - - -1 v ds =-18v, v gs =0v i dss - - -25 a v ds =-18v, v gs =0v, tj=125 c - 50.3 72 v gs =-4.5v, i d =-4.3a *r ds(on) - 66.6 135 m v gs =-2.5v, i d =-2a *g fs - 6.3 - s v ds =-10v, i d =-3a dynamic ciss - 679 890 coss - 59 80 crss - 56 75 pf v ds =-10v, v gs =0v, f=1mhz *td (on) - 10.2 21 *tr - 19.2 40 *td (off) - 71.4 145 *tf - 24.6 50 ns v ds =-10v, i d =-1a, v gs =-4.5v, r g =10 *qg - 7.8 12 *qgs - 1.3 2.6 *qgd - 1.7 3.4 nc v ds =-10v, i d =-5a, v gs =-4.5v rg - 13.9 20 f=1mhz body diode *i s - - -1.9 *i sm - - -7.6 a *v sd - -0.86 -1.2 v v gs =0v, i s =-2a *qrr - 7.2 - nc *trr - 3.4 - ns i f =-1a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 4/13 mta015c02q8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 5 10 15 20 25 30 35 40 01234 v ds , drain-source voltage(v) i d , drain current(a) 8v,7v,6v, 5v, 4v, 3v v gs =2v v gs =2.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0246810 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 012345678 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8a i d =5.2a drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =8a r dson @tj=25c : 14.3m typ. v gs =2.5v, i d =5.2a r dson @tj=25c : 19m typ.
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 5/13 mta015c02q8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0 4 8 12 16 20 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =10v gate charge characteristics 0 1 2 3 4 5 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =10v i d =5a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms t a =25c, tj=150c,v gs =4.5v r ja =50c/w, single pulse 100 s maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =4.5v, r ja =50c/w
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 6/13 mta015c02q8 cystek product specification typical characteristics(cont.) : q1( n-channel) typical transfer characteristics 0 5 10 15 20 25 30 35 40 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r (t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50 c/w
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 7/13 mta015c02q8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 5 10 15 20 25 30 012345 -v ds , drain-source voltage(v) -i d , drain current (a) 8v 7v 6v 5v -v gs =2v -v gs =2.5v -v gs =3v 4v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =2.5v -v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 4 8 12 16 20 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 240 280 320 360 400 012345678 -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =-4.3a -2a drain-source on-state resistance vs junction tempearture 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-5a r dson @tj=25c : 50.3m typ. v gs =-2.5v, i d =-2a r dson @tj=25c : 66.6m typ.
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 8/13 mta015c02q8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 048121620 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage i d =-250 a i d =-1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) pulsed ta=25c v ds =-10v gate charge characteristics 0 1 2 3 4 5 0 2 4 6 8 10 12 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-10v i d =-5a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100m 1ms 100 ja =50c/w, single pulse maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-4.5v, r ja =50c/w
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 9/13 mta015c02q8 cystek product specification typical characteristics(cont.) : q2(p-channel) typical transfer characteristics 0 5 10 15 20 25 30 012345 -v gs , gate-source voltage(v) -i d , drain current (a) -v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50 c/w
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 10/13 mta015c02q8 cystek product specification recommended soldering footprint
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 11/13 mta015c02q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 12/13 mta015c02q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c020q8 issued date : 2018.01.08 revised date : page no. : 13/13 mta015c02q8 cystek product specification sop-8 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 date code device name a015 c02 date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, a u g h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99

▲Up To Search▲

Price & Availability of MTA015C02Q8-0-T3-G

	To Download MTA015C02Q8-0-T3-G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .